IXFH32N50Q Datasheet, PDF (2/4 Pages) IXYS Corporation – HiPerFET™ Power MOSFETs Q-Class

Symbol
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g(on)
Q_gs
Q_gd
R_thJC
R_thCK
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_DS = 10 V; I_D = 0.5 • I_D25, Note 1
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
18 28
S
3950 4925 pF
640 800 pF
210 260 pF
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
R_G = 2 Ω (External),
35 45 ns
42 50 ns
75 95 ns
20 25 ns
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
153 190 nC
26 32 nC
85 105 nC
(TO-247)
0.30 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_S
V_GS = 0 V
I_SM
Repetitive; pulse width limited by T_JM
V_SD
I_F = I_S, V_GS = 0 V, Note 1
32 A
128 A
1.5 V
t_rr
250 ns
Q_RM
I_F = I_S, -di/dt = 100 A/µs, V_R = 100 V
0.75
µC
I_RM
7.5
A
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXFH 32N50Q
IXFT 32N50Q
TO-247 AD (IXFH) Outline
123
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
A
A₁
A₂
b
b₁
b₂
C
D
E
e
L
L1
∅P
Q
R
S
Millimeter
Min. Max.
4.7
5.3
2.2
2.54
2.2
2.6
1.0
1.4
1.65
2.13
2.87
3.12
.4
20.80
15.75
.8
21.46
16.26
5.20
19.81
5.72
20.32
4.50
3.55
3.65
5.89
6.40
4.32
5.49
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205
.780
0.225
.800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505