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IXFH26N50P Datasheet, PDF (2/5 Pages) IXYS Corporation – Avalanche Rated Fast Instrinsic Diode
IXFH 26N50P IXFV 26N50P
IXFV 26N50PS
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
TO-247 AD (IXFH) Outline
gfs
VDS = 20 V; ID = 0.5 ID25, pulse test
16 26
S
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 ID25
RG = 4 Ω (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
3600
pF
370
pF
57
pF
20
ns
25
ns
58
ns
20
ns
60
nC
20
nC
25
nC
0.31 K/W
0.21
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
26 A
104 A
1.5 V
123
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
∅P
Q
R
S
Millimeter
Min. Max.
4.7
5.3
2.2 2.54
2.2
2.6
1.0
1.4
1.65 2.13
2.87 3.12
.4
20.80
15.75
.8
21.46
16.26
5.20
19.81
5.72
20.32
4.50
3.55 3.65
5.89 6.40
4.32 5.49
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205
.780
0.225
.800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
E
E1
L2
A
A1
E1
trr
IF = 25A, -di/dt = 100 A/µs
QRM
VR = 100V
300
ns
D1
3.3
µC
D
PLUS220SMD (IXFV_S) Outline
E
A
E1
L2
A1
E1
D
A3
L3
L
L4
L1
2X b
e
c
A2
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
A
A1
A2
A3
b
c
D
D1
E
E1
e
L
L1
L2
L3
L4
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
L3
L1
L
2X e
3X b
c
A2
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692