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| IXFE44N50QD2 Datasheet, PDF (2/2 Pages) IXYS Corporation – Buck & Boost Configurations for PFC & Motor Control Circuits | |||
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Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
IXFE44N50QD2 IXFE48N50QD2
IXFE44N50QD3 IXFE48N50QD3
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
500
VDS = VGS, ID = 4 mA
2
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = IT
44N50Q
48N50Q
Pulse test, t ⤠300 µs, duty cycle δ ⤠2 %
V
4V
±100 nA
100 µA
2 mA
0.12 â¦
0.11 â¦
ISOPLUS-227 B
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V, ID = IT, pulse test
30 36
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
8000
pF
930
pF
220
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 1⦠(External)
33
ns
22
ns
75
ns
10
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
190
nC
40
nC
86
nC
0.31 K/W
0.07
K/W
Ultra-fast Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IR
VF
trr
IRM
RthJC
RthJK
TTJJ==
25°C;
150°C;
VVRR==
V0R.8RMVRRM
IF = 60A, VGS = 0 V
Note1
TJ = 150°C
II = 1A, di/dt = -200 A/µs, VR = 30 V, TJ = 25°C
IF= 60A, di/dt = -100 A/µs, VR = 100 V, TJ = 100°C
200 µA
2.5 mA
2.05 V
1.4 V
35 50 ns
8.3 A
0.05
0.7 K/W
K/W
Please note:
For characteristic curves please see
IXFK48N50Q
Note: 1. Pulse test, t ⤠300 µs, duty cycle d ⤠2 %
2. IXFE44N50 IT = 22A
IXFE48N50 IT = 24A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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