GWM100-0085X1 Datasheet, PDF (2/3 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

GWM100-0085X1
Source-Drain Diode
Symbol Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_SD
(diode) I_F = 100 A; V_GS = 0 V
t_rr
Q_RM
I_RM
I_F = 100 A; -di_F/dt = 800 A/µs; V_R = 24 V
T_VJ = 125°C
0.9 1.2 V
tbd
ns
tbd
µC
tbd
A
Component
Symbol Conditions
I_RMS
per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
T_J
T_stg
V_ISOL
F_C
I_ISOL < 1 mA, 50/60 Hz, f = 1 minute
mounting force with clip
Maximum Ratings
300
A
-55...+175 °C
-55...+125 °C
1000 V~
50 - 250 N
Symbol Conditions
R 1)
pin to chip
C_P
L+ to L1/L2/L3 or L- to L1/L2/L3
coupling capacity between shorted
pins and mounting tab in the case
Weight
1) _{VDS = ID·(RDS(on) + RPin to ) Chip}
Characteristic Values
min. typ. max.
1.0
mW
160
pF
25
g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307
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