GMM3X160-0055X2 Datasheet, PDF (2/4 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

GMM 3x160-0055X2
Source-Drain Diode
Symbol Conditions
V_SD
(diode) I_F = 80 A; V_GS = 0 V
t_rr
Q_RM
I_RM
I_F = 100 A; -di_F/dt = 800 A/µs
V_R = 24 V; T_J = 125°C
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
0.9 1.2 V
38
ns
0.45
µC
22
A
Component
Symbol Conditions
Maximum Ratings
I_RMS
per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
2 pins for output L1, L2, L3
75
A
T_J
T_stg
V_ISOL
F_C
I_ISOL < 1 mA, 50/60 Hz, f = 1 minute
mounting force with clip
-55...+175 °C
-55...+125 °C
1000 V~
50 - 250 N
Symbol Conditions
R 1)
pin to chip
C_P
coupling capacity between shorted
pins and back side metallization
Characteristic Values
min. typ. max.
tbd
mW
160
pF
Weight
25
g
1) _{VDS = ID·(RDS(on) + 2RPin to ) Chip}
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307
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