FMP36-015P Datasheet, PDF (2/4 Pages) IXYS Corporation – Polar P & N-Channel Power MOSFETs Common Drain Topology

Symbol
Test Conditions²
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = - 250 μA
V_GS(th)
V_DS = V_GS, I_D = - 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = -10V, I_D = -18A, Note 1
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
V_DS = -10V, I_D = -18A, Note 1
V_GS = 0V, V_DS = - 25 V, f = 1MHz
Resistive Switching Times
V_GS = -10V, V_DS = 0.5 z V_DSS, I_D = -18A
R_G = 3.3Ω (External)
Q_g(on)
Q_gs
Q_gd
V_GS= -10V, V_DS = 0.5 z V_DSS, I_D = -18A
R_thJC
R_thCS
Characteristic Values
Min. Typ. Max.
-150
V
- 2.5
- 4.5 V
± 100 nA
-10 μA
- 250 μA
11
19
3100
610
100
110 mΩ
S
pF
pF
pF
21
ns
31
ns
36
ns
15
ns
55
nC
20
nC
18
nC
1.0 °C/W
0.15
°C/W
FMP36-015P
ISOPLUS i4-Pak^TM Outline
Ref: IXYS CO 0077 R0
Drain-Source Diode
Symbol
Test Conditions²
Characteristic Values
(T_J = 25°C unless otherwise specified)
Min. Typ. Max.
I_S
V_GS = 0V
- 22
A
I_SM
Repetitive, pulse width limited by T_JM
-140
A
V_SD
I_F = -18A, V_GS = 0 V, Note 1
t_rr
I_F = -18A, di/dt = 100 A/μs
Q_RM
V_R = - 75V, V_GS = 0V
I_RM
- 3.3
V
228
ns
2.0
μC
-17.6
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
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