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FMM22-06PF Datasheet, PDF (2/2 Pages) IXYS Corporation – PolarHVTM HiPerFET N-Channel Power MOSFET Phase leg Topology
◁
Symbol
Test Conditions2
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
VDS = VGS, ID = 1mA
VGS = ±30 V, VDS = 0V
VDS = VDSS
VGS = 0V
TJ = 125°C
VGS = 10V, ID = 11A, Note 1
VDS = 20V, ID = 11A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Resistive Switching Times
VGS = 10V, VDS = 0.5 z VDSS, ID = 11A
RG = 4Ω (External)
VGS= 10V, VDS = 0.5 z VDSS, ID = 11A
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
± 100 nA
25 μA
250 μA
15
20
3600
305
38
350 mΩ
S
pF
pF
pF
20
ns
20
ns
60
ns
23
ns
58
nC
20
nC
22
nC
0.95 °C/W
0.15
°C/W
Source-Drain Diode
Symbol
Test Conditions3
Characteristic Values
TJ = 25°C unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0V
12
A
ISM
Repetitive, pulse width limited by TJM
66
A
VSD
IF = 22A, VGS = 0V, Note 1
1.5
V
trr
IF = 22A, -di/dt = 100A/μs
QRM
VR = 100V, VGS = 0V
200
ns
1.0
μC
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
FMM22-06PF
ISOPLUS i4-PakTM Outline
Ref: IXYS CO 0077 R0
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537