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DSEP6-06AS Datasheet, PDF (2/2 Pages) IXYS Corporation – HiPerFREDTM Epitaxial Diode with soft recovery
◁
DSEP 6-06AS
10
A
8
IF
6
4
TVJ =150°C
TVJ =100°C
TVJ = 25°C
2
1000
nC
800
TVJ = 100°C
VR = 300V
Qr
600
400
IF = 12A
IF = 6A
IF = 3A
200
30
A
IRM
TVJ = 100°C
VR = 300V
20
IF = 12A
IF = 6A
IF = 3A
10
0
0.0 0.5 1.0 1.5 2.0 V
VF
Fig. 1 Forward current IF versus VF
2.0
1.6
Kf
1.2
0.8
IRM
Qr
0.4
0.0
0
40
80 120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
10
K/W
1
ZthJC
0.1
0
100
A/µs 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
110
ns
100
trr
90
T = 100°C
VJ
VR = 300V
IF = 12A
IF = 6A
IF = 3A
80
70
60
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
20
1.2
V
tfr
15
VFR
µs
0.9
VFR
tfr
10
0.6
5
0.3
TVJ = 100°C
IF = 6A
0
0 200 400
0.0
600 A80/µ0s 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
0.1
DSEP 6-06AS
s
1
t
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
NOTE: Fig. 2 to Fig. 6 shows typical values
2-2