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DSEP29-12A Datasheet, PDF (2/2 Pages) IXYS Corporation – HiPerFRED Epitaxial Diode with soft recovery
◁
DSEP 29-12A
70
A
60
IF 50
TVJ=150°C
40 TVJ=100°C
TVJ= 25°C
30
20
10
0
0
1
2
3 V4
VF
Fig. 1 Forward current I versus V
F
F
2.0
1.5
Kf
1.0
IRM
0.5
Qr
5
mC
4
Qr
TVJ= 100°C
VR = 600V
3
IF= 60A
IF= 30A
2
IF= 15A
1
60
A
50
IRM
40
30
TVJ= 100°C
VR = 600V
IF= 60A
IF= 30A
IF= 15A
20
10
0
100
A/ms 1000
-diF/dt
Fig. 2 Reverse recovery charge Q
r
versus -diF/dt
220
ns
200
trr
180
160
TVJ= 100°C
VR = 600V
IF= 60A
IF= 30A
IF= 15A
140
0
0 200 400 600 A8/0m0s 1000
-diF/dt
Fig. 3 Peak reverse current I
RM
versus -diF/dt
120
V
VFR
tfr
80
TVJ= 100°C
IF = 30A
VFR
1.2
µs
tfr
0.8
40
0.4
0.0
0
40
80 120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
1
K/W
0.1
ZthJC
120
0 200 400 600 A8/0m0s 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
0
0.0
0 200 400 600 A80/m0s 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.502
2
0.193
3
0.205
0.0052
0.0003
0.0162
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
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0.1
DSEP 29-12A
s
1
t
2-2