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DSEP29-06A Datasheet, PDF (2/3 Pages) IXYS Corporation – HiPerFREDTM Epitaxial Diode with soft recovery
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DSEP 29-06A
DSEP 29-06AS
70
A
60
IF 50
40
30
TVJ=150°C
T =100°C
VJ
20
10
TVJ=25°C
0
0.0 0.5 1.0 1.5 V2.0
VF
Fig. 1 Forward current IF versus VF
2.0
1.5
Kf
1.0
IRM
0.5
Qr
3000
nC
TVJ= 100°C
VR = 300V
2500
Qr
2000
1500
1000
IF= 60A
IF= 30A
IF= 15A
500
0
100
A/µs 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
130
ns
120
trr
110
100
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
90
80
0.0
0
40
80 120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
1
K/W
70
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
0.1
ZthJC
50
A
TVJ= 100°C
VR = 300V
IRM 40
30 IF= 60A
IF= 30A
IF= 15A
20
10
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
20
1.2
V
VFR
15
tfr
VFR
µs
tfr
0.9
10
0.6
5
0.3
TVJ= 100°C
IF = 30A
0
0 200 400
0.0
600 A80/µ0s 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.502
2
0.193
3
0.205
0.0052
0.0003
0.0162
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
0.1
DSEP 29-06A
s
1
t
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
NOTE: Fig. 2 to Fig. 6 shows typical values
2-3
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