DS17 Datasheet, PDF (2/2 Pages) IXYS Corporation – Rectifier Diode Avalanche Diode

DS 17
DSA 17
DSI 17
DSAI 17
100
A
80
I_F
60
T_VJ= 180°C
T_VJ= 25°C
40
20
typ. lim.
400
A ^{50Hz, 80% VRRM}
300
I_FSM
T_VJ = 45°C
200
T_VJ = 180°C
100
1000
8A0²0s ^{VR = 0 V}
600
I²t
400
T_VJ = 45°C
T_VJ = 180°C
200
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1V.6 1.8
V_F
Fig. 1 Forward characteristics
50
W
40
P_F
30
20
DC
180° sin
120°
10
60°
30°
0
10^-3
10^-2
10^-1 s 10⁰
t
Fig. 2 Surge overload current
I_FSM: crest value, t: duration
R_thJA :
2.8 K/W
3.2 K/W
4,8 K/W
6.3 K/W
8.5 K/W
Cu 80x80
100
1
2 3 4 5 6 7 m8 s910
t
Fig. 3 I²t versus time (1-10 ms)
40
A
30
I_F(AV)M
20
10
0
0
10
20
30
40 A 500
50
100
150 °C 200
I_F(AV)M
T_amb
Fig. 4 Power dissipation versus forward current and ambient temperature
K/W
Z_thJH ²
0
0
50
100 150 °C
T_case
Fig. 5 Max. forward current at case
temperature 180° sine
R_thJH for various conduction angles d:
d
DC
180°
120°
60°
30°
R_thJH (K/W)
2.10
2.23
2.33
2.53
2.72
1
0
10^-3
10^-2
10^-1
10⁰
Fig. 6 Transient thermal impedance junction to heatsink
10¹
s
t
Constants for Z_thJH calculation:
i
1
2
3
10²
4
R_thi (K/W)
0.1006
0.5311
0.8683
0.600
t_i (s)
0.0021
0.0881
2.968
3.20
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