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| DE375-501N21A Datasheet, PDF (2/4 Pages) IXYS Corporation – RF Power MOSFET | |||
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Symbol Test Conditions
RG
Ciss
Coss
Crss
Cstray
Td(on)
Ton
Td(off)
Toff
Qg(on)
Qgs
Qgd
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Back Metal to any Pin
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 ⦠(External)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
DE375-501N21A
RF Power MOSFET
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ. max.
0.3
â¦
2000
pF
200
pF
45
pF
33
pF
5
ns
3
ns
5
ns
8
ns
77
nC
21
nC
40
nC
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ. max.
IS
ISM
VSD
VGS = 0 V
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Pulse test, t ⤠300 µs, duty cycle ⤠2%
21 A
150 A
1.5 V
Trr
QRM
IRM
IF = IS, -di/dt = 100A/µs,
VR = 100V
200
ns
0.6
µC
15
A
For detailed device mounting and installation instructions, see the âDE-
Series MOSFET Mounting Instructionsâ technical note on IXYS RFâs web
site at www.ixysrf.com/Technical_Support/App_notes.html
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
4,850,072
5,049,961
5,640,045
4,881,106
5,063,307
4,891,686
5,187,117
4,931,844
5,237,481
5,017,508
5,486,715
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