CS30-12IO1 Datasheet, PDF (2/3 Pages) IXYS Corporation – Phase Control Thyristor

CS 30
Symbol
I ,I
RD
V_T
V_T0
r_T
V_GT
I_GT
V
GD
I_GD
I_L
I_H
t
gd
R_thJC
R_thJH
a
Test Conditions
Characteristic Values
T =T ;V =V ;V =V
VJ
VJM R
RRM D
DRM
£
I_T = 45 A; T_VJ = 25°C
£
For power-loss calculations only (T_VJ = 125°C)
5 mA
1.6 V
0.9 V
15 mW
V_D = 6 V;
V_D = 6 V;
T =T ;
VJ
VJM
T_VJ = 25°C
T_VJ = -40°C
T_VJ = 25°C
T
VJ
=
-40°C
T_VJ = 125°C
V = 2/3 V
D
DRM
£
1.0 V
£
1.2 V
£
65 mA
£
80 mA
£
50 mA
£
0.2 V
£
5 mA
T_VJ = 25°C; t_P = 10 ms
I_G = 0.3 A; di_G/dt = 0.3 A/ms
T_VJ = 25°C; V_D = 6 V; R_GK = ¥
T
VJ
=
25°C;
V
D
=
1/2
V
DRM
I_G = 0.3 A; di_G/dt = 0.3 A/ms
DC current
DC current
£ 150 mA
£ 100 mA
£
2 ms
0.62 K/W
0.82 K/W
Max. acceleration, 50 Hz
50 m/s²
TO-247 AD and ISOPLUS 247 ^TM
10
V
V_G
1: I , T = 125°C
GT VJ
2: I_GT, T_VJ = 25°C
3: I , T = -40°C
GT VJ
6
1
1 ²³
5
4
4: P_GAV = 0.5 W
I_GD, T_VJ =125°C
5: P_GM = 1 W
6: P_GM = 10 W
0.1
1
10
100
1000 mA 10000
I_G
Fig. 1 Gate trigger range
1000
µs
t_gd
100
T_VJ = 25°C
typ.
Limit
Dim. Millimeter
Min. Max.
A 19.81 20.32
B 20.80 21.46
C 15.75 16.26
D* 3.55 3.65
E 4.32 5.49
F
5.4 6.2
G 1.65 2.13
H
- 4.5
J
1.0 1.4
K 10.8 11.0
L
4.7 5.3
M
0.4 0.8
N
1.5 2.49
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
* ISOPLUS 247 ^TM without hole
10
1
10
100
mA 1000
I_G
Fig. 2 Gate controlled delay time t
gd
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2-3