VWM350-0075P Datasheet, PDF (1/2 Pages) IXYS Corporation – Three phase full bridge with Trench MOSFETs

VWM 350-0075P
Three phase full bridge
with Trench MOSFETs
V_DSS = 75 V
R_DSon = 2.3 mΩ
I_D25 = 340 A
Preliminary data
L+
T1
T2
T3
G1
G3
G5
S1
S3
S5
L1
L2
T4
T5
T6
L3
G2
G4
G6
S2
S4
S6
L-
MOSFETs T1 - T6
Symbol
V_DSS
V_GS
I_D25
I_D80
I_D25
I_D80
Conditions
T_VJ = 25°C to 150°C
T_C = 25°C
T_C = 80°C
T_C = 25°C (diode)
T_C = 80°C (diode)
Maximum Ratings
75
V
±20
V
340
A
250
A
340
A
250
A
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
- etc...
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Symbol
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
R_DSon
V_GS = 10 V; I_D = I_D80
2.3
V_GSth
V_DS = 20 V; I_D = 2 mA
2
I_DSS
V_DS = 75V; V_GS = 0 V; T_VJ = 25°C
T_VJ = 125°C
0.25
I_GSS
V_GS = ±20 V; V_DS = 0 V
Q_g
450
Q
gs
Q_gd
V_GS= 10 V; V_DS = 0.5 • V_DSS; I_D = 175A
60
170
t_d(on)
t
r
t_d(off)
t
f
V_GS= 10 V; V_DS = 0.5 • V_DSS;
I_D = 175 A; R_G = 2.2 Ω
60
170
320
200
V_F
(diode) I_F = 175 A; V_GS= 0 V
1.1
t_rr
(diode) I_F = 40 A; -di/dt = 200 A/µs; V_DS= 30 V
90
R_thJC
R
thJH
with heat transfer paste
Ratings and characteristic values are per individual MOSFET
0.51
IXYS reserves the right to change limits, test conditions and dimensions.
3.3 mΩ
4V
0.02 mA
mA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
1.6 V
ns
0.26 K/W
K/W
Features
• MOSFETs in trench technology:
- low R_DSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
with optimized heat transfer
© 2003 IXYS All rights reserved
1-2
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: [phone], Fax: [phone]
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]