VWI6-12P1 Datasheet, PDF (1/2 Pages) IXYS Corporation – IGBT Module

IGBT Module
Sixpack in ECO-PAC 2
VWI 6-12P1
I_C25
=6A
V_CES
= 1200 V
V_{CE(sat) typ.} = 3.9 V
Preliminary data
S9
L9
N9
X 18
N5
R5
W 14
A1
C1
K 10
F3
G1
K 12
NTC
J 13
A5
D5
H5
Pin arrangement see outlines
IGBTs
Symbol
V_CES
V_GES
I_C25
I_C80
I_CM
V_CEK
t_SC
(SCSOA)
P_tot
Symbol
Conditions
Maximum Ratings
T_VJ = 25°C to 150°C
1200
V
± 20
V
T_C = 25°C
T_C = 80°C
6
A
4.1
A
V_GE
=
15/0
V;
R
G
=
89
Ω;
T_VJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
9.6
A
V_CES
V_CE = V_CES; V_GE = 15/0 V; R_G = 89 Ω; T_VJ = 125°C
non-repetitive
10
µs
T_C = 25°C
40
W
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
V
CE(sat)
V_GE(th)
I_CES
I_GES
t_d(on)
t
r
t_d(off)
t
f
E_on
E_off
C
ies
Q_Gon
R_thJC
R
thJH
I
C
=
4
A;
V
GE
=
15
V;
T_VJ
=
25°C
T_VJ = 125°C
I_C = 0.1 mA; V_GE = V_CE
V_CE = V_CES; V_GE = 0 V; T_VJ = 25°C
V_CE = 960 V; V_GE = 0 V; T_VJ = 125°C
V_CE = 0 V; V_GE = ± 20 V
Inductive load, T_VJ = 125°C
V_CE = 600 V; I_C = 4 A
V
GE
=
15/0
V;
R
G
=
89
Ω
V = 25 V; V = 0 V; f = 1 MHz
CE
GE
V_CE = 960 V; V_GE = 15 V; I_C = 2 A
(per IGBT)
(per IGBT) with heatsink compound
3.9 4.6 V
4.6
V
3
5V
0.1 mA
0.5
mA
100 nA
30
ns
20
ns
290
ns
90
ns
0.4
mJ
0.2
mJ
205
pF
11
nC
3.1 K/W
6.2
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: [phone], Fax: [phone]
www.ixys.net
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]