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| VVZB120 Datasheet, PDF (1/3 Pages) IXYS Corporation – Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System | |||
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Three Phase Half Controlled
Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
VRRM
V
1200
1400
1600
Type
VVZB 120-12 io1
VVZB 120-14 io1
VVZB 120-16 io1
VVZB 120
VRRM = 1200-1600 V
IdAV = 120 A
Symbol
IdAV
IFRMS/ITRMS
IFSM/ITSM
I2t
(di/dt)cr
(dv/dt)cr
PGM
PGAVM
Conditions
Maximum Ratings
Tcase= 80°C, sinusoidal 120°
Tcase= 80°C, per leg
TVJ = 25°C, t = 10 ms, VR = 0 V
TVJ = 150°C,t = 10 ms, VR = 0 V
TVJ = 25°C, t = 10 ms, VR = 0 V
TVJ = 150°C,t = 10 ms, VR = 0V
TVJ = TVJM
repetitive, IT = 150 A
f = 50 Hz, tP = 200 µs
VD = 2/3 VDRM
IG = 0.45 A,
diG/dt = 0.45 A/µs
non repetitive, IT = Id(AV)/3
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ¥; method 1 (linear voltage rise)
TVJ = TVJM
IT = Id(AV)/3
tP = 30 µs
tP = 300 µs
tP = 10 ms
120
77
750
670
2810
2240
150
A
A
A
A
A
A
A/µs
500 A/µs
1000 V/µs
10
W
5
W
1
W
0.5
W
VCES
VGE
TVJ = 25°C to 150°C
Continuous
IC25
Tcase = 25°C, DC
IC80
Tcase = 80°C, DC
ICM
tp = Pulse width limited by TVJM
Ptot
Tcase = 80°C
VRRM
IF(AV)
IF(RMS)
IFRM
Tcase = 80°C, rectangular d = 0.5
Tcase = 80°C, rectangular d = 0.5
Tcase = 80°C, tP = 10 µs, f = 5 kHz
IFSM
TVJ = 45°C, t = 10 ms
TVJ = 150°C,t = 10 ms
Ptot
Tcase = 80°C
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1200
V
± 20
V
78
A
52
A
140
A
222
W
1200
V
27
A
38
A
tbd
A
200
A
180
A
64
W
Features
⢠Soldering connections for PCB
mounting
⢠Isolation voltage 3600 V~
⢠Ultrafast freewheel diode
⢠Convenient package outline
Applications
⢠Drive Inverters with brake system
Advantages
⢠2 functions in one package
⢠No external isolation
⢠Easy to mount with two screws
⢠Suitable for wave soldering
⢠High temperature and power cycling
capability
1-3
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