VUM24-05N Datasheet, PDF (1/4 Pages) IXYS Corporation – Power MOSFET Stage for Boost Converters Module for Power Factor Correction

Power MOSFET Stage
for Boost Converters
Module for Power Factor Correction
V_{RRM (Diode)}
V
600
V_DSS
V
500
Type
VUM 24-05N
VUM 24-05N
I_D25 = 35 A
V_DSS = 500 V
R_DS(on) = 0.12 Ω
5 1 3 278
46
1234
5 ^{6 78}
Symbol
Conditions
V_DSS
V_DGR
V_GS
I_D
I_D
I_DM
P_D
I_S
I_SM
V_RRM
I_dAV
I_FSM
T_VJ = 25°C to 150°C
T_VJ = 25°C to 150°C; R_GS = 10 kΩ
Continuous
T_S = 85°C
T_S = 25°C
T_S = 25°C, t_p = ①
T_S = 85°C
V_GS = 0 V, T_S = 25°C
V_GS = 0 V, T_S = 25°C, t_p = ①
T_S = 85°C, rectangular δ = 0.5
T_VJ = 45°C, t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
T_VJ = 150°C, t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
P
V_RRM
I_dAV
I_FSM
T_S = 85°C
T_S = 85°C, sinus 180°
T_VJ = 45°C, t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
T_VJ = 150°C, t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
P
T_VJ
T_JM
T_stg
V_ISOL
M_d
Weight
T_S = 85°C
50/60 Hz
I_ISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque (M5)
① Pulse width limited by T_VJ
Maximum Ratings
500
V
500
V
±20
V
24
A
35
A
95
A
170
W
24
A
95
A
600
V
40
A
300
A
320
A
260
A
280
A
36
W
800
V
40
A
300
A
320
A
260
A
280
A
33
W
-40...+150
°C
150
°C
-40...+150
°C
3000
V~
3600
V~
2-2.5/18-22 Nm/lb.in.
28
g
Features
• Package with DCB ceramic base plate
• Soldering connections for PCB
mounting
• Isolation voltage 3600 V~
• Low R_DS(on) HDMOS^TM process
• Low package inductance for high
speed switching
• Ultrafast boost diode
• Kelvin source for easy drive
Applications
• Power factor pre-conditioner for
SMPS, UPS, battery chargers and
inverters
• Boost topology for SMPS including
1~ rectifier bridge
• Power supply for welding equipment
Advantages
• 3 functions in one package
• Output power up to 5 kW
• No external isolation
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
capability
• Fits easiliy to all available PFC
controller ICs
IXYS reserves the right to change limits, test conditions and dimensions
© 2007 IXYS All rights reserved
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