VUI30-12N1 Datasheet, PDF (1/2 Pages) IXYS Corporation – Rectifier Module for Three Phase Power Factor Correction

Advanced Technical Information
Rectifier Module for
Three Phase Power Factor Correction
VUI 30-12 N1
Typical Rectified Mains Power
P_n = 15 kW
at V_n = 400 V 3~; f_T = 15 kHz; T_C = 80°C
Transistor T
Symbol
V_CES
V_GES
I_C25
I_C80
I_CM
V_CEK
t_SC
(SCSOA)
Conditions
Maximum Ratings
T_VJ = 25°C to 150°C
1200
V
± 20
V
T_C = 25°C
T_C = 80°C
95
A
65
A
V_GE = ±15 V; R_G = 22 Ω; T_VJ = 125°C
RBSOA; L = 100 µH
100
A
V_CES
V_CE = V_CES; V_GE = ±15 V; R_G = 22 Ω; T_VJ = 125°C
non-repetitive
10
µs
Symbol
V_CE(sat)
V_GE(th)
I_CES
I_GES
t_d(on)
t
r
t_d(off)
t
f
E_on
E_off
C
ies
Q_Gon
R_thJC
R
thJH
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
I_C = 20 A; V_GE = 15 V; T_VJ = 25°C
T_VJ = 125°C
I_C = 2 mA; V_GE = V_CE
V_CE = V_CES; V_GE = 0 V; T_VJ = 25°C
T_VJ = 125°C
V_CE = 0 V; V_GE = ± 20 V
Inductive load, T_VJ = 125°C
V = 600 V; I = 20 A
CE
C
V_GE = ±15 V; R_G = 22 Ω
1.7 2.0 V
1.9
V
4.5
6.5 V
1.6 mA
1.8
mA
400 nA
100
ns
70
ns
500
ns
70
ns
3.0
mJ
2.2
mJ
V = 25 V; V = 0 V; f = 1 MHz
CE
GE
V_CE= 600 V; V_GE = 15 V; I_C = 50 A
with heatsink transfer paste
3.3
nF
240
nC
0.3 K/W
0.6
K/W
Features
• NPT IGBT with low saturation voltage
• fast recovery epitaxial diodes (FRED)
• module package:
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
- large creepage and strike distances
Applications
Three phase rectifier with power factor
correction, set up as follows:
• input from three phase mains
- wide range of input voltage
- mains currents approximately sinusoidal
in phase with mains voltage
- topology permits to control overcurrent
such as in case of input voltage peaks
• output
- direct current link
- buck type converter - reduced output
voltage
- possibility to supply boost converter,
inverter etc.
• required components
- one power semiconductor module per
phase
- one inductor and one capacitor per
phase on mains side
- output inductor, depending on supplied
circuit
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: [phone], Fax: [phone]
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]