VMO650-01F Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET-TM MOSFET Module

HiPerFET^TM
MOSFET Module
VMO 650-01F
V_DSS = 100 V
I_D25 = 690 A
R_DS(on) = 1.8 mW
N-Channel Enhancement Mode
Preliminary Data
D
G
KS
S
E 72873
S
D
G
KS
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D80
I_DM
P_D
T
J
T_JM
T_stg
V_ISOL
M
d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R
DS(on)
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 10 kW
Continuous
Transient
100
V
100
V
±20
V
±30
V
T_S = 25°C
T_S = 80°C
T_S = 25°C
T_C = 25°C
T
S
= 25°C
690
A
520
A
pulse width limited by T_JM
2780
A
2500
W
1740
W
-40 ...+150
°C
150
°C
-40 ... +125
°C
50/60 Hz
I
ISOL
£
1
mA
t = 1 min
t=1s
Mounting torque (M6)
Terminal connection torque (M5)
3000
V~
3600
2.25-2.75/20-25 Nm/lb.in.
2.5-3.7/22-33 Nm/lb.in.
typical including screws
250
g
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 7 mA
100
V_DS = 20 V, I_D = 130 mA
3
V_GS = ±20 V DC, V_DS = 0
V_DS = 0.8 • V_DSS
V =0V
GS
T_J = 25°C
T
J
=
125°C
V = 10 V, I = 0.5 • I
GS
D
D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
6V
±500 nA
3.5 mA
14 mA
1.8 mW
D = Drain
S = Source
KS = Kelvin Source G = Gate
Features
q _{International standard package}
q _{Direct Copper Bonded Al O ceramic}
23
base plate
q _{Isolation voltage 3600 V~}
q _{Low R HDMOS}TM _process
DS(on)
q _{Low package inductance for high}
speed switching
q _{Kelvin Source contact for easy drive}
Applications
q _{AC motor speed control for electric}
vehicles
q _{DC servo and robot drives}
q _{Switched-mode and resonant-mode}
power supplies
q _{DC choppers}
Advantages
q _{Easy to mount}
q _{Space and weight savings}
q _{High power density}
q _{Low losses}
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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