VMO60-05F Datasheet, PDF (1/2 Pages) IXYS Corporation – High dv/dt, Low-trr, HDMOS-TM Family

HiPerFET^TM
Power Module
High dv/dt, Low t_rr, HDMOS^TM Family
VMO 60-05F
V_DSS = 500 V
I_D25 = 60 A
R_DS(on) = 65 mW
Preliminary Data
1
TO-240 AA
1
3
6
5
5
6
3
1 = Drain
5 = Gate
3 = Source
6 = Kelvin Source
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D100
I_DM
P_tot
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 10 kW
Continuous
Transient
500
V
500
V
±20
V
±30
V
T_C = 25°C
60
A
T_C = 100°C
37
A
T_C = 25°C, t_p = 10 µs, pulse width limited by T_JM
240
A
T_C = 25°C
590
W
-40 ... +150
°C
150
°C
-40 ... +125
°C
50/60 Hz, t = 1 min
I_ISOL £ 1 mA, t = 1 s
Mounting torque(M5 or 10-32 UNF)
Terminal connection torque (M5)
3000
V~
3600
V~
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
Typical including screws
90
g
Features
• International standard package
• Direct copper bonded Al₂O₃ ceramic
base plate
• Isolation voltage 3600 V~
• Low R_DS(on) HDMOS^TM process
Applications
• Switched-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• DC servo and robot drives
• DC choppers
Advantages
• Easy to mount with two screws
• Space and weight savings
• High power density
• Low losses
Symbol
Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
V_GS = 0 V
500
V_DS = V_GS, I_D = 24 mA
2
V_GS = ±20 V DC, V_DS = 0
V_DS = V_DSS,
V_GS = 0 V, T_J = 25°C
V_DS = 0.8 • V_DSS, V_GS = 0 V, T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t £ 300 µs, duty cycle d £ 2 %
V
4V
500 nA
600 µA
3 mA
65 75 mW
Data per MOSFET unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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