VMO550-01F Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET MOSFET Module

HiPerFET^TM
MOSFET Module
VMO 550-01F
V_DSS = 100 V
I_D25 = 590 A
R_DS(on) = 2.1 mW
N-Channel Enhancement Mode
Preliminary Data
D
G
KS
S
E 72873
S
D
G
KS
Symbol
V
DSS
V_DGR
V_GS
V_GSM
I_D25
I
D80
I
DM
P
D
T_J
T
JM
T
stg
V
ISOL
M_d
Weight
Symbol
V_DSS
V_GS(th)
I
GSS
I
DSS
R_DS(on)
Test Conditions
Maximum Ratings
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 10 kW
Continuous
Transient
100
V
100
V
±20
V
±30
V
T_S = 25°C
T
S
= 80°C
T
S
= 25°C
T
C
= 25°C
T_S = 25°C
590
A
440
A
pulse width limited by T
2360
A
JM
2200
W
1470
W
-40 ...+150
°C
150
°C
-40 ... +125
°C
50/60 Hz
I_ISOL £ 1 mA
t = 1 min
t=1s
Mounting torque (M6)
Terminal connection torque (M5)
3000
V~
3600
2.25-2.75/20-25 Nm/lb.in.
2.5-3.7/22-33 Nm/lb.in.
typical including screws
250
g
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 6 mA
100
V_DS = 20 V, I_D = 110 mA
3
V
GS
=
±20
V
DC,
V
DS
=
0
V = 0.8 • V
DS
DSS
V_GS = 0 V
T
J
=
25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
6V
±500 nA
3 mA
12 mA
2.1 mW
D = Drain
S = Source
KS = Kelvin Source G = Gate
Features
q _{International standard package}
q _{Direct Copper Bonded Al O ceramic}
23
base plate
q _{Isolation voltage 3600 V~}
q _{Low R HDMOS}TM _process
DS(on)
q _{Low package inductance for high}
speed switching
q _{Kelvin Source contact for easy drive}
Applications
q _{AC motor speed control for electric}
vehicles
q _{DC servo and robot drives}
q _{Switched-mode and resonant-mode}
power supplies
q _{DC choppers}
Advantages
q _{Easy to mount}
q _{Space and weight savings}
q _{High power density}
q _{Low losses}
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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