VMO1600-02P Datasheet, PDF (1/6 Pages) IXYS Corporation – N-Channel Enhancement Mode

PolarHT^TM Module
N-Channel Enhancement Mode
VMO 1600-02P
V_DSS = 200 V
I_D80 = 1600 A
R_DS(on) = 1.7 mW max.
D
G
KS
S
SD
KS
G
MOSFET
Symbol
V_DSS
V_GS
I_D25
I_D80
I_F25
I_F80
Symbol
R_DSon
V_GS(th)
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_rec
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_rec
R_thJC
R_thJH
Features
Conditions
T_VJ = 25°C to 150°C
Maximum Ratings
200 V
t• PolarHTTM technology
- low R_DSon
- dv/dt ruggedness
T_C = 25°C
T_C = 80°C
T_C = 25°C (diode)
T_C = 80°C (diode)
Conditions
V_GS = 10 V; I_D = 1600 A;

V_DS = 20 V; I_D = 5 mA
V_DS = V_DSS; V_GS = 0 V;
± 20 V
1900 A
u _{1600 A}
1900 A
1600 A
- ^o _{Characteristic Values}
(T_VJ = 25°C, unless otherwise specified)
e _{min. typ. max.}
T_VJ = 25°C
s T_VJ = 125°C
1.58
3.25
2.5
1.7 mW
3.6 mW
5
V
a ^{TVJ = 25°C}
0.5 mA
- fast intrinsic reverse diode
• Package
- low inductive current path
- screw connection to high current main
terminals
- use of non interchangeable connectors
for auxiliary terminals possible
- Kelvin source terminals for easy drive
- isolated ceramic base plate
Applications
• converters with high power density for
- main & aux. AC drives of electric vehicles
- DC drives
- power supplies
V_GS = ± 20 V; V_DS = 0 V
h^{TVJ = 125°C}
p ^{VGS = 10 V; VDS = 0.5·VDSS; ID = ID80}
5.0
2900
600
1600
320
mA
2 µA
nC
nC
nC
ns
1220
ns
inductive load
620
ns
V_GS = 10 V; V_DS = 100 V
I_D = 1600 A; R_G = 1.8 Ω T_VJ = 25°C
700
ns
24
mJ
152
mJ
3.7
mJ
340
ns
1220
ns
inductive load
740
ns
V_GS = 10 V; V_DS = 100 V
I_D = 1600 A; R_G = 1.8 Ω T_VJ = 125°C
580
ns
28
mJ
147
mJ
4.9
mJ
with heat transfer paste
0.03 K/W
0.037 0.056 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100302b
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