VMO1200-01F Datasheet, PDF (1/6 Pages) IXYS Corporation – PolarHT™ Module N-Channel Enhancement Mode

PolarHT™ Module
N-Channel Enhancement Mode
D
G
KS
S
VMO 1200-01F
V_DSS = 100 V
I_D25 = 1220 A
R_DS(on) = 1.25 mΩ max.
KS
G
SD
MOSFET
Symbol
V_DSS
V_GS
I_D25
I_D80
I_F25
I_F80
Conditions
T_VJ = 25°C to 150°C
T_C = 25°C
T_C = 80°C
T_C = 25°C (diode)
T_C = 80°C (diode)
Maximum Ratings
100 V
± 20
V
1220 A
970 A
1220 A
970 A
Symbol
R_DSon
V_GS(th)
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_rec
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_rec
R_thJC
R_thJH
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 10 V; I_D = I_D80

T_VJ = 25°C
T_VJ = 125°C
V_DS = 20 V; I_D = 3 mA
V_DS = 0.8 • V_DSS; V_GS = 0 V; T_VJ = 25°C

T_VJ = 125°C
V_GS = ± 20 V; V_DS = 0 V
V_GS = 10 V; V_DS = 50 V; I_D = 1000 A
1.00 1.25 mW
1.62 2.00 mW
3
5
V
0.3 mA
6 mA
1.2 µA
1710
nC
396
nC
1020
nC
360
ns
inductive load
V_GS = 10 V; V_DS = 50 V
I_D = 1000 A; R_G = 1.8 Ω
R_G = R_{G ext} + R_{out driver}
T_VJ = 25°C
1620
460
1020
7.7
62.3
ns
ns
ns
mJ
mJ
0.57
mJ
400
ns
inductive load
V_GS = 10 V; V_DS = 50 V
I_D = 1000 A; R_G = 1.8 Ω
R_G = R_{G ext} + R_{out driver}
T_VJ = 125°C
1640
560
820
8.5
58.9
ns
ns
ns
mJ
mJ
0.82
mJ
with heat transfer paste (IXYS test setup)
0.053 K/W
0.065 0.088 K/W
Features
• PolarHT™ MOSFET technology
- low R_DSon
- dv/dt ruggedness
- fast intrinsic reverse diode
• package
- low inductive current path
- screw connection to high current
main terminals
- use of non interchangeable
connectors for auxiliary terminals
possible
- Kelvin source terminals for easy drive
- isolated DCB ceramic base plate
Applications
• converters with high power density for
- main and auxiliary AC drives of
electric vehicles
- DC drives
- power supplies
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20100614b
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