VMM90-09F Datasheet, PDF (1/2 Pages) IXYS Corporation – Dual Power HiPerFET-TM Module

Advanced Technical Information
Dual Power
HiPerFET^TM Module
Phaseleg Configuration
VMM 90-09F ^V_DSS ^{= 900 V}
I_D25 = 85 A
R_DS(on) = 76 mW
MOSFET T1 + T2
Symbol
V_DSS
V_GS
I_D25
I_D80
I_F25
I_F80
Conditions
T_VJ = 25°C to 150°C
T_C = 25°C
T_C = 80°C
(diode) T_C = 25°C
(diode) T_C = 80°C
Maximum Ratings
900
V
±20
V
85
A
65
A
85
A
65
A
Symbol
R_DSon
V_GSth
I_DSS
I_GSS
Q_g
Q
gs
Q_gd
t_d(on)
t
r
t_d(off)
t
f
V_F
t_rr
R_thJC
R_thJS
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 10 V; I_D = I_D80
V_DS = 20 V; I_D = 30 mA
V_DS = 0.8 • V_DSS; V_GS = 0 V; T_VJ = 25°C
T_VJ = 125°C
V_GS = ±20 V; V_DS = 0 V
V_GS= 10 V; V_DS = 450 V; I_D = 50 A
3
1.5
960
225
430
76 mW
5V
0.4 mA
mA
1 µA
nC
nC
nC
V = 10 V; V = 0.5 • V ;
GS
DS
DSS
I_D = I_D80; R_G = 0.47 W
150
ns
180
ns
330
ns
140
ns
(diode)
I
F
=
90
A;
V_GS
=
0
V
(diode) I_F = 90 A; -di/dt = 400 A/µs; V_DS = 100 V
with heat transfer paste
1.1 1.6 V
250
ns
0.08 K/W
0.12
K/W
Features
• HiPerFET ^TM technology
– low R_DSon
– unclamped inductive switching
(UIS)
capability
– dv/dt ruggedness
– fast intrinsic reverse diode
– low gate charge
• thermistor
for internal temperature measurement
• package
– low inductive current path
– screw connection to high current
main terminals
– use of non interchangeable
connectors for auxiliary terminals
possible
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
Applications
• converters with high power density
and high switching speed for
– power supplies
– induction heating
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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