VMM85-02F Datasheet, PDF (1/4 Pages) IXYS Corporation – Dual Power HiPerFET-TM Module

Dual Power
HiPerFET^TM Module
VMM 85-02F
V_DSS = 200 V
I_D25 = 84 A
R_DS(on) = 25 mW
Phaseleg Configuration
High dv/dt, Low t_rr, HDMOS^TM Family
3
8
9
1
2
1
3
11
10
9
8
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D80
I_DM
P_tot
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
11
10
1 = Drain 1, Source 2
2
2 = Source 1
3 = Drain 2
8 = Gate 2
9 = Kelvin Source 2
10 = Kelvin Source 1
11 = Gate 1
Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 10 kW
Continuous
Transient
200
V
200
V
±20
V
±30
V
T_C = 25°C
84
A
T_C = 80°C
63
A
T_C = 25°C, t_p = 10 µs, pulse width limited by T_JM
335
A
T_C = 25°C
370
W
-40 ... +150
°C
150
°C
-40 ... +125
°C
50/60 Hz
I_ISOL £ 1 mA
t = 1 min
t=1s
Mounting torque (M5 or 10-32 UNF)
Terminal connection torque (M5)
3000
V~
3600
V~
2.25-2.75/20-25 Nm/lb.in.
2.5-4/22-35 Nm/lb.in.
Typical including screws
130
g
Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V
200
V_DS = V_GS, I_D = 8 mA
2
V_GS = ±20 V DC, V_DS = 0
V_DS = V_DSS,
V_GS = 0 V, T_J = 25°C
V_DS = 0.8 • V_DSS, V_GS = 0 V, T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t £ 300 µs, duty cycle d £ 2%
V
4V
500 nA
400 µA
2 mA
20 25 mW
Features
• Two MOSFET's in phaseleg config.
• International standard package
• Direct copper bonded Al₂O₃ ceramic
base plate
• Isolation voltage 3600 V~
• Low R_DS(on) HDMOS^TM process
• Low package inductance for high
speed switching
• Kelvin source contact
Applications
• Switched-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
Advantages
• Easy to mount with two screws
• Space and weight savings
• High power density
• Low losses
Data per MOSFET unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
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