VMM650-01F Datasheet, PDF (1/2 Pages) IXYS Corporation – Dual Power HiPerFETTM Module

VMM 650-01F
Dual Power
HiPerFET^TM Module
Phaseleg Configuration
V_DSS = 100 V
I_D25 = 680 A
R_DS(on) = 1.8 mΩ
Preliminary Data
MOSFET T1 + T2
Symbol
V_DSS
V_GS
I_D25
I_D80
I_F25
I_F80
Conditions
T_VJ = 25°C to 150°C
T_C = 25°C
①
T_C = 80°C
①
(diode) T_C = 25°C ①
(diode) T_C = 80°C ①
3
8
9
1
11
10
2
6
7
NTC
Maximum Ratings
100
V
±20
V
680
A
500
A
680
A
500
A
Symbol
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
R_DSon
V_GS = 10 V; I_D = I_D80
1.8
V_GSth
V
DS
=
20
V;
I_D
=
30
mA
2
I
DSS
V
DS
=
0.8
•
V;
DSS
V
GS
=
0
V;
T_VJ
=
25°C
T_VJ = 125°C
1.5
I_GSS
V_GS = ±20 V; V_DS = 0 V
Q_g
Q_gs
V_GS= 10 V; V_DS = 75 V; I_D = I_D80
Q_gd
1440
200
680
t
d(on)
t_r
t_d(off)
t_f
V_GS= 10 V; V_DS = 0.5 • V_DSS;
I
D
=
I;
D80
R
G
=
0.47
Ω
150
250
400
200
V_F
(diode) I_F = 650 A; V_GS = 0 V
1.2
t_rr
(diode) I_F = 650 A; -di/dt = 500 A/µs; V_DS = ½ V_DSS 300
R_thJC
R_thJS
with heat transfer paste
① additional current limitation by external leads
0.12
2.2 mΩ
4V
1 mA
mA
1 µA
nC
nC
nC
ns
ns
ns
ns
1.5 V
ns
0.08 K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
Features
• HiPerFET ^TM technology
– low R_DSon
– unclamped inductive switching (UIS)
capability
– dv/dt ruggedness
– fast intrinsic reverse diode
– low gate charge
• thermistor
for internal temperature measurement
• package
– low inductive current path
– screw connection to high current
main terminals
– use of non interchangeable
connectors for auxiliary terminals
possible
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
Applications
• converters with high power density for
– main and auxiliary AC drives of
electric vehicles
– 4 quadrant DC drives
– power supplies
1-2