VMM1500-0075X2 Datasheet, PDF (1/5 Pages) IXYS Corporation – Dual Power MOSFET Module

VMM 1500-0075X2
Dual Power
MOSFET Module
V_DSS = 75 V
I_D25 = 1560 A
R_DS(on) = 0.38 mΩ
Phaseleg Configuration
3
8
23
1
11
10
9
8
9
1
11
10
2
MOSFET T1 + T2
Symbol Conditions
V_DSS
V_GS
T_VJ = 25°C to 150°C
I_D25
T_C = 25°C
j
I_D80
T_C = 80°C
j
I_F25
T_C = 25°C (diode) j
I_F80
T_C = 80°C (diode) j
Maximum Ratings
75 V
± 20
V
1560 A
1240 A
1560 A
1240 A
Symbol Conditions
R_DSon
(T_VJ = 25°C, unless otherwise specified)
V_GS = 10 V; I_D = I_D80; on chip level
V_GS(th)
V_DS = 20 V; I_D = 2.5 mA
I_DSS
V_DS = V_DSS; V_GS = 0 V

T_VJ = 25°C
T_VJ = 125°C
I_GSS
V_GS = ± 20 V; V_DS = 0 V
C_iss
C_oss
C_rss
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_rec
V_GS = 10 V; V_DS = 37 V; I_D = 1200 A
inductive load
V_GS = 10 V; V_DS = 37 V
I_D = 1200 A; R_G = 1.8 Ω
R_G = R_{G ext} + R_{out driver}
T_VJ = 25°C
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_rec
inductive load
V_GS = 10 V; V_DS = 37 V
I_D = 1200 A; R_G = 1.8 Ω
R_G = R_{G ext} + R_{out driver}
T_VJ = 125°C
R_thJC
R_thJH
with heat transfer paste (IXYS test setup)
j additional current limitation by external leads
Characteristic Values
min. typ. max.
0.38 mW
2
4
V
0.15 mA
1.5
mA
3.0 µA
115
nF
12.8
nF
1.38
nF
1950
nC
580
nC
450
nC
260
ns
1680
ns
500
ns
880
ns
3
mJ
54
mJ
0.06
mJ
260
ns
1680
ns
520
ns
720
ns
3.5
mJ
49
mJ
0.08
mJ
0.08 K/W
0.094 0.13 K/W
© 2010 IXYS All rights reserved
Features
• Trench MOSFETs
- low R_DSon
- optimized intrinsic reverse diode
• package
- low inductive current path
- screw connection to high current
main terminals
- use of non interchangeable
connectors for auxiliary terminals
possible
- Kelvin source terminals for easy drive
- isolated DCB ceramic base plate
Applications
• converters with high power density for
- main and auxiliary AC drives of
electric vehicles
- 4 quadrant DC drives
- power supplies with low input voltage,
e.g. from fuel cells or solar cells
20100629a
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