VMM1500-0075P Datasheet, PDF (1/2 Pages) IXYS Corporation – Dual Power MOSFET Module

Dual Power
MOSFET Module
Phaseleg Configuration
Preliminary data
VMM 1500-0075P
V_DSS = 75 V
I_D25 = 1500 A
R_DS(on) = 0.55 mΩ
3
8
9
1
11
10
2
MOSFET T1 + T2
Symbol
V_DSS
V_GS
I_D25
I_D80
I_F25
I_F80
Conditions
T_VJ = 25°C to 150°C
T_C = 25°C
①
T_C = 80°C
①
(diode) T_C = 25°C ①
(diode) T_C = 80°C ①
Maximum Ratings
75
V
±20
V
1500
A
1200
A
1500
A
1100
A
Symbol
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
R_DSon
V_GS = 10 V; I_D = I_D80
V_GSth
V_DS = 20 V; I_D = 10 mA
2
I_DSS
V_DS = V_DSS; V_GS = 0 V; T_VJ = 25°C
T_VJ = 125°C
I_GSS
V_GS = ±20 V; V_DS = 0 V
Q_g
Q
gs
V_GS= 10 V; V_DS = 60 V; I_D = 500 A
Q_gd
t_d(on)
t
r
t_d(off)
t
f
V = 10 V; V = 30 V;
GS
DS
I_D = 250 A; R_G = 1 Ω
V_F
(diode)
I
F
=
750
A;
V_GS
=
0
V
t_rr
(diode) I_F = 200 A; -di/dt = 1000 A/µs; V_DS = 30 V
R_thJC
R_thJS
with heat transfer paste
① additional current limitation by external leads
0.55
1.5
2480
330
940
60
170
320
200
1.2
90
0.12
0.8 mΩ
4V
0.15 mA
mA
1.5 µA
nC
nC
nC
ns
ns
ns
ns
1.6 V
ns
0.06 K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
Features
• Trench MOSFETs
– low R_DSon
– optimized intrinsic reverse diode
• package
– low inductive current path
– screw connection to high current
main terminals
– use of non interchangeable
connectors for auxiliary terminals
possible
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
Applications
• converters with high power density for
– main and auxiliary AC drives of
electric vehicles
– 4 quadrant DC drives
– power supplies with low input voltage,
e.g. from fuel cells or solar cells
1-2