VMM15-045 Datasheet, PDF (1/2 Pages) IXYS Corporation – Dual Power MOSFET Modules

Dual Power
MOSFET Modules
VMM 15-045
V_DSS
I
D25
R_DS(on)
= 450 V
= 20 A
= 0.2 Ω
N-Channel Enhancement Mode
Symbol
Test Conditions
V_DSS
V_DGR
V_GS
V
GSM
I
D25
I_D85
I_DM
P_D
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 20 kΩ
Continuous
Transient
T
K
=
25°C
T_K = 85°C
T_K = 25°C, t_p = 10 µs
T_K = 25°C
50/60 Hz
I_ISOL ≤ 1 mA
Mounting torque
typ.
t = 1 min
t=1s
(M5)
(10-32 UNF)
73 4
86 2 1
5
Maximum Ratings
per switch
450
450
±20
±30
20
16
80
175
-40 ... +150
150
-40 ... +125
3000
3600
2-2.5
18-22
28
V
V
V
V
A
A
A
W
°C
°C
°C
V~
V~
Nm
lb.in.
g
1
234
567
8
1, 4 = Gate, 5, 8 = Drain
6, 7 = Source, 2, 3 Kelvin Source
Features
q _{2 independent MOSFET in 1 package}
q _{Package with DCB ceramic base plate}
q _{Isolation voltage 3600 V~}
q _{Low R HDMOS}TM _process
DS(on)
q _{Low package inductance for high}
speed switching
q _{Kelvin contact for easy drive}
q _{UL registered E 72873}
Symbol
V_DSS
V
GS(th)
I
GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 0.5 mA
V = V , I = 5 mA
DS
GS D
450
V
2.0
5.5 V
V
GS
=
±20
V
DC,
V
DS
=
0
±500 nA
V_DS = V_DSS,
V_GS = 0 V, T_J = 25°C
V_DS = 0.8 • V_DSS, V_GS = 0 V, T_J = 125°C
0.5 mA
3 mA
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.18 0.2 Ω
Applications
q _{AC motor speed control for electric}
vehicles
q _{DC servo and robot drives}
q _{Switched-mode and resonant-mode}
power supplies
q _{DC choppers}
Advantages
q _{Easy to mount with two screws}
q _{Space and weight savings}
q _{High power density}
q _{Low losses}
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: [phone] Fax: [phone]
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: [phone] Fax: [phone]