VMK90-02T2 Datasheet, PDF (1/4 Pages) IXYS Corporation – Dual Power MOSFET Module

Dual Power
MOSFET Module
Common-Source connected
N-Channel Enhancement Mode
VMK 90-02T2
45
123
67
V_DSS = 200 V
I_D25 = 83 A
R_DS(on) = 25 mW
Symbol
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I
D80
I_DM
P_D
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Symbol
V
DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 6.8 kW
Continuous
Transient
200
V
200
V
±20
V
±30
V
T_C = 25°C
83
A
T
C
= 80°C
62
A
T_C = 25°C, t_p = 10 ms, pulse width limited by T_JM
330
A
T_C = 25°C, T_J = 150°C,
380
W
-40 ... +150
°C
150
°C
-40 ... +125
°C
50/60 Hz
I_ISOL £ 1 mA
t = 1 min
t=1s
Mounting torque(M5 or 10-32 UNF)
Terminal connection torque (M5)
2500
V~
3000
V~
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
Typical including screws
90
g
TO-240 AA
E 72873
12
3
6
7
4
5
1, 3 = Drain, 2 = Common Source
5, 6 = Gate, 4, 7 = Kelvin Source
Features
q _{Two MOSFET with common source}
q _{International standard package}
JEDEC TO-240 AA
q _{Direct copper bonded Al O ceramic}
23
base plate
q _{Isolation voltage 3000 V~}
q _{Low R HDMOS}TM _process
DS(on)
q _{Low package inductance for high}
speed switching
q _{Kelvin source contact}
q _{Keyed twin plugs}
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V = 0 V, I = 1 mA
200
GS
D
V_DS = V_GS, I_D = 3 mA
2
V_GS = ±20 V DC, V_DS = 0
V_DS = 0.8 • V_DSS, V_GS = 0 V, T_J = 25°C
V_GS = 0 V, T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4V
500 nA
400 mA
2 mA
25 mW
Applications
q _{Push-pull inverters}
q _{Switched-mode and resonant-mode}
power supplies
q _{Uninterruptible power supplies (UPS)}
q _{AC static switches}
Advantages
q _{Easy to mount with two screws}
q _{Space and weight savings}
q _{High power density}
q _{Low losses}
Data per MOSFET unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
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