VMK165-007T Datasheet, PDF (1/2 Pages) IXYS Corporation – Dual Power MOSFET Module

Advanced Technical Information
Dual Power
MOSFET Module
Common-Source connected
N-Channel Enhancement Mode
VMK 165-007T
V_DSS = 70 V
I_D25 = 165 A
R_DS(on) = 7 mW
45
123
67
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D
I_DM
P_tot
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 6.8 kW
Continuous
Transient
70
V
70
V
±20
V
±30
V
T_C = 25°C
165
A
T_C = 100°C
104
A
T_C = 25°C, t_p = 10 µs, pulse width limited by T_JM 660
A
T_C = 25°C, T_J = 150°C
390
W
-40 ... +150
°C
150
°C
-40 ... +125
°C
50/60 Hz
I_ISOL £ 1 mA
t = 1 min
t=1s
Mounting torque(M5 or 10-32 UNF)
Terminal connection torque (M5)
3000
V~
3600
V~
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
Typical including screws
90
g
Symbol
Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
V_GS = 0 V, I_D = 1 mA
70
V_DS = V_GS, I_D = 8 mA
2
V_GS = ±20 V DC, V_DS = 0
V_DS = V_DSS,
V_GS = 0 V, T_J = 25°C
V_DS = 0.8 • V_DSS, V_GS = 0 V, T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t £ 300 µs, duty cycle d £ 2 %
V
4V
500 nA
200 µA
1 mA
6
7 mW
Data per MOSFET unless otherwise stated.
TO-240 AA
E 72873
12
3
6
7
4
5
1, 3 = Drain, 2 = Common Source
5, 6 = Gate, 4, 7 = Kelvin Source
Features
• Two MOSFET with common source
• International standard package
JEDEC TO-240 AA
• Direct copper bonded Al₂O₃ ceramic
base plate
• Isolation voltage 3000 V~
• Low R_DS(on) HDMOS^TM process
• Low package inductance for high
speed switching
• Kelvin source contact
• Keyed twin plugs
Applications
• Push-pull inverters
• Switched-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• AC static switches
Advantages
• Easy to mount with two screws
• Space and weight savings
• High power density
• Low losses
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