VHM40-06P1 Datasheet, PDF (1/2 Pages) IXYS Corporation – CoolMOS Power MOSFET

VHM40-06P1
CoolMOS Power MOSFET
in ECO-PAC 2
N-Channel Enhancement Mode
Low R_DSon, High V_DSS MOSFET
Package with Electrically Isolated Base
Preliminary data sheet
MOSFET
Symbol
V_DSS
V_GS
I_D25
I_D90
dv/dt
E_AS
E_AR
Conditions
T_VJ = 25°C to 150°C
T_C = 25°C
T_C = 90°C
V_DS < V_DSS; I_F ≤ 50A;di_F/dt≤ 200A/µs
T_VJ = 150°C
I_D = 10 A; L = 36 mH; T_C = 25°C
I_D = 20 A; L = 5 µH; T_C = 25°C
L4
L6
K 12 L 9
NTC
P 18
F10
R 18
K 13
K10
T 18
V 18
X 18
Maximum Ratings
600
V
±20
V
38
A
25
A
6 V/ns
1.8
J
1
mJ
Symbol
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
R_DSon
V_GS = 10 V; I_D = I_D90
V_GSth
V_DS = 20 V; I_D = 3 mA;
3.5
I_DSS
V_DS = V_DSS; V_GS = 0 V; T_VJ = 25°C
T_VJ = 125°C
60
I_GSS
V_GS = ±20 V; V_DS = 0 V
Q
220
g
Q_gs
V_GS= 10 V; V_DS = 350 V; I_D = 50 A
55
Q_gd
125
t
30
d(on)
t_r
t
d(off)
V = 10 V; V = 380 V;
GS
DS
I_D = 25 A; R_G = 1.8 Ω
95
100
t_f
10
V_F
(reverse conduction) I_F = 20 A; V_GS = 0 V
0.9
R_thJC
per MOSFET
Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated
70 mΩ
5.5 V
25 µA
µA
100 nA
nC
nC
nC
ns
ns
ns
ns
1.1 V
0.45 K/W
I_D25 = 38 A
V_DSS = 600 V
R_DSon = 70 mΩ
1)
Pin arangement see outlines
Features
● _{ECO-PAC 2 with DCB Base}
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- solderable pins for DCB mounting
● _{fast CoolMOS power MOSFET - 2}nd _generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
● _{Enhanced total power density}
Applications
● _{Switched mode power supplies (SMPS)}
● _{Uninterruptible power supplies (UPS)}
● _{Power factor correction (PFC)}
● _Welding
● _{Inductive heating}
1) _{CoolMOS is a trademark of Infineon Technologies AG.}
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
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