VBH40-05B Datasheet, PDF (1/3 Pages) IXYS Corporation – Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge

VBH 40-05B
Module with HiPerFET^TM H-Bridge and
Single Phase Mains Rectifier Bridge
Preliminary
V_DSS = 500 V
R_DSon = 116 mΩ
V_RRM = 1200 V
I_DAV25 = 90 A
Mains Rectifier Bridge D1 - D4
Symbol
V_RRM
I_FAV25
I_FAV80
I_FSM
Conditions
T_C = 25°C; sine 180°
T_C = 80°C; sine 180°
T_VJ = 25°C; t = 10 ms sine 50 Hz
Maximum Ratings
1200
V
45
A
33
A
400
A
Symbol
V_F
I
R
R_thJC
R
thJS
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
I_F = 20 A
T_VJ = 25°C
T_VJ = 125°C
V =V
R
RRM
T_VJ = 25°C
T_VJ = 125°C
(per diode)
with heat transfer paste
1.1 1.2 V
1.0
V
0.02 mA
0.4
mA
1.42 K/W
2.8
K/W
Application
primary side of mains supplied
• welding converters
• switched mode power supplies
• induction heaters
Features
• H-bridge with
HiPerFET^TM technology:
- low R_DSon
- unclamped inductive switching
(UIS) capability
- dv/dt ruggedness
- fast intrinsic reverse diode
- Kelvin source for easy drive
- low inductive, symmetrical current
paths
• thermistor for internal temperature
measurement
• package:
- high level of integration - only one
power semiconductor module
required for the whole primary side
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: [phone], Fax: [phone]
1-3
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]