VBE20 Datasheet, PDF (1/1 Pages) IXYS Corporation – Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)

Single Phase
Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
VBE 20
I = 20 A
dAV
V_RRM = 2000 V
t_rr = 70 ns
V_RSM
V
2000
V_RRM
V
2000
Type
VBE 20-20NO1
1
5
1
10
6
5
10
6
Symbol
I_dAV
I_FSM
I²dt
T_VJ
T_VJM
T_stg
V_ISOL
M_d
Weight
Conditions
T_C = 65°C, module
T_VJ = 45°C;
V_R = 0
t = 10 ms (50 Hz), sine
T =T
VJ
VJM
V =0
R
t = 10 ms (50 Hz), sine
T_VJ = 45°C
V_R = 0
t = 10 ms (50 Hz), sine
T_VJ = T_VJM
V_R = 0
t = 10 ms (50 Hz), sine
50/60 Hz, RMS t = 1 min
I_ISOL £ 1 mA
t=1s
Mounting torque (M5)
(10-32UNF)
typ.
Maximum Ratings
20
A
75
A
65
A
28
A²s
21
A²s
-40...+150
150
-40...+125
3000
3600
2 - 2.5
18 - 22
35
°C
°C
°C
V~
V~
Nm
lb.in.
g
Symbol
I_R
V_F
V_T0
r_T
R_thJC
R_thCH
I_RM
t_rr
d_S
d_A
a
Conditions
V_R = V_RRM
V_R = 0.8 V_RRM
T_VJ = 25°C
T_VJ = 125°C
I_F = 12 A
T_VJ = 25°C
For power-loss calculations only
per diode,
DC
I_F = 12 A, -di_F/dt = 100 A/ms
V_R = 540 V, L £ 0.05 mH, T_VJ = 100°C
I_F = 1 A; -di/dt = 100 A/ms; V_R = 30 V, T_VJ = 25°C
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
Characteristic Values
typ. max
0.75 mA
4
7 mA
5.41 V
3.3 V
93 mW
1.7 K/W
0.3
K/W
9
12 A
70
90 ns
12.7 mm
9.4 mm
50 m/s²
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
© 2000 IXYS All rights reserved
Features
q _{Package with DCB ceramic base plate}
q _{Isolation voltage 3600 V~}
q _{Planar passivated chips}
q _{Leads suitable for PC board soldering}
q _{Creeping and creepage-distance}
fulfil UL 508/CSA 22.2NO14 and
VDE 0160 requirements
q _{Epoxy meets UL94V-O}
q _{UL listing applied for}
Applications
q _{Supplies for DC power equipment}
q _{Input rectifiers for PWM inverter}
q _{Output filter for PWM inverter}
Advantages
q _{Reduced EMI/RFI}
q _{Easy to mount with two screws}
q _{Space and weight savings}
q _{Improved temperature and power}
cycling
Dimensions in mm (1 mm = 0.0394")
1-1