MWT-GK Datasheet, PDF (1/1 Pages) IXYS Corporation – K-band 18-26.5GHz Gunn Diode

MwT-GK
K-band 18-26.5GHz Gunn Diode
(Preliminary)
Features:
K-band (18-26.5 GHz) frequency source applications
Excellent frequency chirp performance
Pulsed or CW operation
20 years of proven performance & reliability
Processed in MwT captive GaAs fab
Available in packaged or die form
Typical Applications:
Motion Detection and Surveillance
Microwave Transmitter and Receiver
Military Radar
Gunn Diode Oscillators
Radar Detectors
Based on MwT preparatory epitaxial profile design and process technology, MwT-GK is a Gunn
diode device targeted at CW and pulsed K-band (18-26.5 GHz) frequency source applications. The
device has output power of 13 dBm with excellent chirp performance in pulsed operation mode. The
device is fabricated at MwT GaAs fab using process technologies with proven reliability and
robustness. MwT-GK is available in die or packaged form.
Electrical Specifications @ T= +25°C
SYMBOL PARAMETERS
Min Typ Max Unit
Freq.
Frequency Range (1) 18
26.5 GHz
P1dB
Output Power (2)
11.0 13.0
dBm
DC Voltage
6.0
V
Idd
DC Current
140 200 mA
(1) Operating around a specific frequency with a narrow bandwidth.
(2) Measured with pulsed operation in a cavity oscillator designed to operate
at Fo=24.125 GHz. Pulse width=4 µsec; Duty cycle=3.5%.
Absolute Maximum Ratings
Maximum Bias Voltage
Maximum Case Operating Temperature
Maximum Storage Temperature
7.5 V
+ 85 °C
- 55 to + 120 °C
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX [phone] EMAIL [e-mail]
Data contained herein is subject to change without notice. All rights reserved © 2004