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| MWI75-12E8 Datasheet, PDF (1/2 Pages) IXYS Corporation – IGBT Modules | |||
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Advanced Technical Information
MWI 75-12 E8
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
IC25
= 130 A
VCES
= 1200 V
VCE(sat) typ. = 2.0 V
13, 21
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
tSC
(SCSOA)
Ptot
Symbol
V
CE(sat)
VGE(th)
ICES
IGES
td(on)
t
r
td(off)
t
f
Eon
Eoff
C
ies
QGon
RthJC
1
2
3
4
14, 20
5
9
6
10
19
17
15
7
11
8
12
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
± 20
V
TC = 25°C
TC = 80°C
130
A
90
A
VGE
=
±15
V;
R
G
=
15
â¦;
TVJ
=
125°C
Clamped inductive load; L = 100 µH
ICM = 150
A
VCEK ⤠VCES
VCE = 900 V; VGE = ±15 V; RG = 15 â¦; TVJ = 125°C
10
µs
non-repetitive
TC = 25°C
500
W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
I
C
=
75
A;
V
GE
=
15
V;
TVJ
=
25°C
TVJ = 125°C
IC = 3 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
V = 600 V; I = 75 A
CE
C
VGE = ±15 V; RG = 15 â¦
2.0 2.5 V
2.2
V
4.5
6.5 V
1.1 mA
1.1
mA
400 nA
150
ns
60
ns
680
ns
50
ns
9.0
mJ
7.5
mJ
V = 25 V; V = 0 V; f = 1 MHz
CE
GE
VCE = 600V; VGE = 15 V; IC = 75 A
(per IGBT)
5.7
nF
0.75
µC
0.25 K/W
B3
Features
⢠IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current for optimized
performance also in resonant circuits
⢠HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
⢠Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Typical Applications
⢠AC drives
⢠power supplies with power factor
correction
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
1-2
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