MWI45-12T6K Datasheet, PDF (1/2 Pages) IXYS Corporation – IGBT Module Sixpack

Advanced Technical Information
MWI 45-12 T6K
IGBT Module
Sixpack
Short Circuit SOA Capability
Square RBSOA
10, 23
14
8
13
NTC
18
22
17
21
7
6
5
9, 24
4
2
3
1
I_C25
= 43 A
V_CES
= 1200 V
V_{CE(sat) typ.} = 1.9 V
11, 12
15, 16
19, 20
IGBTs
Symbol
V_CES
V_GES
I_C25
I_C80
I_CM
V_CEK
t
SC
P_tot
Conditions
Maximum Ratings
T_VJ = 25°C to 150°C
1200
V
± 20
V
T_C = 25°C
T_C = 80°C
43
A
31
A
V_GE = ±15 V; R_G = 36 Ω; T_VJ = 125°C
50
A
RBSOA; clamped inductive load; L = 100 µH
V_CES
V
CE
=
900
V;
V_GE
=
±15
V;
R
G
=
36
Ω;
T_VJ
=
125°C
10
µs
SCSOA; non-repetitive
T_C = 25°C
160
W
Features
• Trench IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant
circuits
• HiPerFRED^TM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Symbol
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
V_CE(sat)
V
GE(th)
I_CES
I_GES
t
d(on)
t_r
t_d(off)
t_f
E_on
E_off
C_ies
Q_Gon
R
thJC
R_thCH
I_C = 25 A; V_GE = 15 V; T_VJ = 25°C
T_VJ = 125°C
I = 1 mA; V = V
C
GE
CE
V_CE = V_CES;
V_GE = 0 V; T_VJ = 25°C
T_VJ = 125°C
V_CE = 0 V; V_GE = ± 20 V
Inductive load, T_VJ = 125°C
V_CE = 600 V; I_C = 25 A
V
GE
=
±15
V;
R
G
=
36
Ω
V_CE = 25 V; V_GE = 0 V; f = 1 MHz
V_CE = 600 V; V_GE = 15 V; I_C = 25 A
(per IGBT)
1.9
2.2
4.5
0.6
90
50
520
90
2.5
3.4
1810
240
0.3
2.3 V
V
6.5 V
0.4 mA
mA
400 nA
ns
ns
ns
ns
mJ
mJ
pF
nC
0.8 K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
Typical Applications
• AC drives
• power supplies with power factor
correction
1-2