MWI35-12A7 Datasheet, PDF (1/4 Pages) IXYS Corporation – IGBT Modules

MWI 35-12 A7
MWI 35-12 A7T
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
I
= 62 A
C25
V_CES
= 1200 V
V_{CE(sat) typ.} = 2.2 V
13
1
Preliminary Data
2
Type:
NTC - Option:
MWI 35-12 A7
without NTC
3
4
MWI 35-12 A7T with NTC
17
5
9
6
10
7
11
8
12
T
16
NTC
15
14
T
IGBTs
Symbol
V_CES
V_GES
I_C25
I_C80
RBSOA
t_SC
(SCSOA)
P_tot
Conditions
Maximum Ratings
T_VJ = 25°C to 150°C
1200
V
± 20
V
T_C = 25°C
T_C = 80°C
62
A
44
A
V_GE
=
±15
V;
R
G
=
39
W;
T_VJ
=
125°C
Clamped inductive load; L = 100 µH
I_CM = 70
A
V_CEK £ V_CES
V_CE = V_CES; V_GE = ±15 V; R_G = 39 W; T_VJ = 125°C
non-repetitive
10
µs
T_C = 25°C
280
W
Symbol
V
CE(sat)
V_GE(th)
I_CES
I_GES
t_d(on)
t
r
t_d(off)
t
f
E_on
E_off
C
ies
Q_Gon
R_thJC
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
I
C
=
35
A;
V
GE
=
15
V;
T_VJ
=
25°C
T_VJ = 125°C
I_C = 1.2 mA; V_GE = V_CE
V_CE = V_CES; V_GE = 0 V; T_VJ = 25°C
T_VJ = 125°C
V_CE = 0 V; V_GE = ± 20 V
Inductive load, T_VJ = 125°C
V = 600 V; I = 35 A
CE
C
V_GE = ±15 V; R_G = 39 W
2.2 2.8 V
2.6
V
4.5
6.5 V
2 mA
2
mA
200 nA
100
ns
80
ns
500
ns
70
ns
5.4
mJ
4.2
mJ
V = 25 V; V = 0 V; f = 1 MHz
CE
GE
V_CE = 600V; V_GE = 15 V; I_C = 35 A
(per IGBT)
2000
140
pF
nC
0.44 K/W
Features
q _{NPT IGBT technology}
q _{low saturation voltage}
q _{low switching losses}
q _{switching frequency up to 30 kHz}
q _{square RBSOA, no latch up}
q _{high short circuit capability}
q _{positive temperature coefficient for}
easy parallelling
q _{MOS input, voltage controlled}
q _{ultra fast free wheeling diodes}
q _{solderable pins for PCB mounting}
q _{package with copper base plate}
Advantages
q _{space savings}
q _{reduced protection circuits}
q _{package designed for wave soldering}
Typical Applications
q _{AC motor control}
q _{AC servo and robot drives}
q _{power supplies}
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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