 English |
|
|
|
|
|
|
|
| MWI100-12E8 Datasheet, PDF (1/2 Pages) IXYS Corporation – IGBT Modules | |||
| |||
|
Advanced Technical Information
MWI 100-12 E8
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
IC25
= 165 A
VCES
= 1200 V
VCE(sat) typ. = 2.0 V
13, 21
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
tSC
(SCSOA)
Ptot
Symbol
V
CE(sat)
VGE(th)
ICES
IGES
td(on)
t
r
td(off)
t
f
Eon
Eoff
C
ies
QGon
RthJC
1
2
3
4
14, 20
5
9
6
10
19
17
15
7
11
8
12
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
± 20
V
TC = 25°C
TC = 80°C
165
A
115
A
VGE
=
±15
V;
R
G
=
10
â¦;
TVJ
=
125°C
Clamped inductive load; L = 100 µH
ICM = 200
A
VCEK ⤠VCES
VCE = 900 V; VGE = ±15 V; RG = 10 â¦; TVJ = 125°C
10
µs
non-repetitive
TC = 25°C
640
W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
I
C
=
100
A;
V
GE
=
15
V;
TVJ
=
25°C
TVJ = 125°C
IC = 4 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
V = 600 V; I = 100 A
CE
C
VGE = ±15 V; RG = 10 â¦
2.0 2.5 V
2.2
V
4.5
6.5 V
1.4 mA
1.4
mA
400 nA
150
ns
60
ns
680
ns
50
ns
12
mJ
10
mJ
V = 25 V; V = 0 V; f = 1 MHz
CE
GE
VCE = 600V; VGE = 15 V; IC = 100 A
(per IGBT)
7.4
nF
1
µC
0.19 K/W
B3
Features
⢠IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current for optimized
performance also in resonant circuits
⢠HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
⢠Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Typical Applications
⢠AC drives
⢠power supplies with power factor
correction
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
1-2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese