MMIX1F44N100Q3 Datasheet, PDF (1/2 Pages) IXYS Corporation – 1000V Q3-Class HiPerFET™ Power MOSFET In SMPD Technology

POWER
NEW PRODUCT BRIEF
1000V Q3-Class HiPerFET™ Power MOSFET In SMPD Technology
MORE POWER, LESS PACKAGE (ultra-low profile, energy efficient, and rugged)
August 2012
OVERVIEW
The 1000V/30A Q3-Class HiPerFET^TM Power MOSFET is now available in the IXYS
Surface Mount Power Device (SMPD) package. The device can be easily surface-
mounted on a Printed Circuit Board (PCB), using a standard pick-and-place and reflow
soldering process. No costly screws, cables, bus-bars or hand soldered contacts are
needed. Weighing only 8g, it is much lighter (typically by 50%) than comparable
conventional power modules, enabling a lower carbon footprint for end users. This is
one of the key “green” initiatives of IXYS Corporation as it develops new products
lighter in weight for the Cleantech industry.
Due to its new compact and high performance SMPD package, the MMIX1F44N100Q3
MOSFET exhibits a low package inductance and high current handling capability. A
ceramic isolation of 2500V is achieved with the Direct Copper Bond (DCB) substrate
technology–an electrically isolated tab is provided for heat sinking.
The Q3-Class is a direct result of combining the latest PolarHV^TM technology platform
with advanced double metal construction, resulting in an optimal combination of low
on-state resistance (R ) and gate charge (Q ). Additionally the device has a low
DS(on)
g
gate-to-drain (Miller) charge (Q ) and low intrinsic gate resistance (R ). These
gd
Gi
enhancements lower gate drive requirements and switching losses.
What’s more, the power switching capability and ruggedness of the device are further
enhanced by the proven HiPerFET^TM process, yielding a power MOSFET with a fast
intrinsic rectifier; the result is a low reverse recovery charge (Q ), an ability to sustain
rr
hard-switching operations, and an excellent commutating dv/dt rating (up to 50V/ns).
These featured diode properties translate into a faster transient response, an increase
in power efficiency, and higher operating frequencies. Other beneficial product
features include a low junction-to-case thermal resistance (R ) of 0.18 °C/W and
thJC(max)
high avalanche energy (E ) rating of 4 Joules.
AS
The new Power MOSFET is well suited for such applications as, among others, DC-DC
converters, battery chargers, switch-mode and resonant power supplies, DC choppers,
temperature and lighting controls, and high frequency plasma generators. In particu-
lar, the enhanced dv/dt rating and high avalanche energy capability mean additional
safety margins for stresses encountered in high voltage industrial switching applica-
tions, improving the long-term reliability of these systems.
FEATURES
Low R and gate charge (Q )
DS(on)
g
Low intrinsic gate resistance
Fast intrinsic rectifier
Excellent dv/dt performance
High power density
High avalanche energy rating
SMPD ADVANTAGES
Ultra-low and compact package profile
(5.3mm height x 24.8mm length x 32.3mm width)
Surface mountable via standard reflow process
Low package weight (8g)
2500V ceramic isolation (DCB)
Low package inductance
Excellent thermal performance
High power cycling capability
APPLICATIONS
DC-DC converters
Battery chargers
Switching and resonant power Supplies
DC choppers
Temperature and lighting controls
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