MKI50-06A7 Datasheet, PDF (1/4 Pages) IXYS Corporation – IGBT Modules H-Bridge

MKI 50-06 A7
IGBT Modules
H-Bridge
Short Circuit SOA Capability
Square RBSOA
I
= 72 A
C25
V_CES
= 600 V
V_{CE(sat) typ.} = 1.9 V
Preliminary Data
13
T1
1
2
T2
3
4
17
T5
D1 ₉
10
T6
D2 ₁₁
12
D5
16
14
D6
IGBTs
Symbol
V_CES
V_GES
I_C25
I_C80
RBSOA
t_SC
(SCSOA)
P_tot
Conditions
Maximum Ratings
T_VJ = 25°C to 150°C
600
V
± 20
V
T_C = 25°C
T_C = 80°C
72
A
50
A
V_GE
=
±15
V;
R
G
=
22
Ω;
T_VJ
=
125°C
Clamped inductive load; L = 100 µH
I_CM = 100
A
V_CEK ≤ V_CES
V_CE = V_CES; V_GE = ±15 V; R_G = 22 Ω; T_VJ = 125°C
non-repetitive
10
µs
T_C = 25°C
225
W
Symbol
V
CE(sat)
V_GE(th)
I_CES
I_GES
t_d(on)
t
r
t_d(off)
t
f
E_on
E_off
C
ies
Q_Gon
R_thJC
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
I
C
=
50
A;
V
GE
=
15
V;
T_VJ
=
25°C
T_VJ = 125°C
I_C = 1 mA; V_GE = V_CE
V_CE = V_CES; V_GE = 0 V; T_VJ = 25°C
T_VJ = 125°C
V_CE = 0 V; V_GE = ± 20 V
Inductive load, T_VJ = 125°C
V = 300 V; I = 50 A
CE
C
V_GE = ±15 V; R_G = 22 Ω
1.9 2.4 V
2.2
V
4.5
6.5 V
0.6 mA
0.7
mA
200 nA
50
ns
60
ns
300
ns
30
ns
2.3
mJ
1.7
mJ
V = 25 V; V = 0 V; f = 1 MHz
CE
GE
V_CE = 300V; V_GE = 15 V; I_C = 50 A
(per IGBT)
2800
120
pF
nC
0.55 K/W
Features
• NPT IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
• supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
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