MIXA81H1200EH Datasheet, PDF (1/6 Pages) IXYS Corporation – IGBT Module

IGBT Module
H Bridge
Part name (Marking on product)
MIXA81H1200EH
MIXA81H1200EH
V_CES = 1200 V
I_C25 = 120 A
V_CE(sat) = 1.8 V
13, 21
1
2
3
4
14, 20
9
10
19
15
11
12
E72873
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x I_C
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low V_CE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E3-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Optimizes pin layout
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
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