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| MIO600-65E11 Datasheet, PDF (1/5 Pages) IXYS Corporation – IGBT Module Single switch | |||
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MIO 600-65E11
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
IC80
= 600 A
VCES = 6500 V
VCE(sat) typ = 4.2 V
C
C
C
C'
5
7
9
3
G
2
E'
1
E
E
E
4
6
8
IGBT
Symbol
VCES
VGES
IC85
ICM
t
SC
Conditions
VGE = 0 V
TC = 85°C
tp = 1 ms; TC = 85°C
V
CC
=
4400
V;
VCEM CHIP
=
<
6500
V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
6500 V
± 20 V
600 A
1200 A
10 µs
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) â
IC = 600 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 240 mA; VCE = VGE
ICES
VCE = 6500 V; VGE = 0 V; TVJ = 125°C
IGES
VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
t
d(on)
RG = 3.9 â¦
tr
td(off)
tf
Eon
Inductive load; TVJ = 125°C;
VGE = ±15 V; VCC = 3600 V;
IC = 600 A; LÏ = 280 nH
RG = 3.9 â¦
RG = 2.7 â¦
RG = 2.7 â¦
RG = 3.9 â¦
Eoff
RG = 2.7 â¦
Cies
Coes
Cres
Qge
VCE = 25 V; VGE = 0 V; f = 1 MHz
IC = 600 A; VCE = 3600 V; VGE = ± 15 V
RthJC
â Collector emitter saturation voltage is given at chip level
4.2
V
5.4
V
6
8V
120 mA
500 nA
620
ns
270
ns
1500
ns
930
ns
4250
mJ
3250
mJ
150
nF
7.57
nF
1.46
nF
9.65
µC
0.011 K/W
Features
⢠NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
⢠Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
⢠AC power converters for
- industrial drives
- windmills
- traction
⢠LASER pulse generator
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1-5
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