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| MIO1200-33E11 Datasheet, PDF (1/3 Pages) IXYS Corporation – IGBT Module Single switch | |||
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Advanced Technical Information
MIO 1200-33E11
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
IC80
= 1200 A
VCES
= 3300 V
VCE(sat) typ. = 3.1 V
C
C
C
C'
5
7
9
3
G
2
E'
1
E
E
E
4
6
8
IGBT
Symbol
VCES
VGES
IC80
ICM
tSC
Conditions
VGE = 0 V
TC = 80°C
tp = 1 ms; TC = 80°C
VCC = 2500 V; VCEM CHIP = < 3300 V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
3300
V
± 20
V
1200
A
2400
A
10
µs
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) â
IC = 1200 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 240 mA; VCE = VGE
ICES
VCE = 3300 V; VGE = 0 V; TVJ = 125°C
IGES
VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
Eon
Inductive load; TVJ = 125°C; VGE = ±15 V;
Eoff
VCC = 1800V; IC = 1200A; RG = 1â¦; LÏ = 100nH
RthJC
â Collector emitter saturation voltage is given at chip level
3.1
V
3.8
V
6
8V
120 mA
500 nA
1750
mJ
2000
mJ
0.0085 K/W
Features
⢠NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
⢠Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
⢠AC power converters for
- industrial drives
- windmills
- traction
⢠LASER pulse generator
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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