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| MIO1200-25E10 Datasheet, PDF (1/6 Pages) IXYS Corporation – IGBT Module Single switch | |||
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Advanced Technical Information
MIO 1200-25E10
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
IC80
= 1200 A
VCES
= 2500 V
VCE(sat) typ. = 2.5 V
C
C
C
C'
G
E'
E
E
E
IGBT
Symbol
VCES
VGES
IC80
ICM
t
SC
Conditions
VGE = 0 V
TC = 80°C
tp = 1 ms; TC = 80°C
V
CC
=
1800
V;
VCEM
CHIP
=
<
2500
V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
2500
V
± 20
V
1200
A
2400
A
10
µs
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) â
IC = 1200 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.5
V
3.1 3.4 V
VGE(th)
IC = 240 mA; VCE = VGE
6
7.5 V
ICES
VCE = 2500 V; VGE = 0 V; TVJ = 125°C
IGES
VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
120 mA
500 nA
td(on)
t
r
td(off)
t
f
Eon
Eoff
Inductive load; TVJ = 125°C; VGE = ±15 V;
VCC = 1250V; IC = 1200A; RG = 1.5â¦; LÏ = 100nH
365
ns
250
ns
980
ns
345
ns
1150
mJ
1250
mJ
C
ies
Coes
C
res
VCE = 25 V; VGE = 0 V; f = 1 MHz
Q
ge
I
C
=
1200
A;
V
CE
=
1250
V;
VGE
=
±
15
V
RthJC
â Collector emitter saturation voltage is given at chip level
186
nF
13.7
nF
3.0
nF
12.2
µC
0.009 K/W
Features
⢠NPT³ IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
⢠Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
⢠AC power converters for
- industrial drives
- windmills
- traction
⢠LASER pulse generator
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-6
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