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| MII400-12E4 Datasheet, PDF (1/2 Pages) IXYS Corporation – IGBT Module | |||
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IGBT Module
phaseleg and chopper topolgies
MII 400-12E4
MID 400-12E4
MDI 400-12E4
Preliminary
3
T1
8
D1
3
3
T1
D1
8
D11
9
1
T2
1
9
T2
11
D2
11
D12
10
2 10
2
MII
MID
1
D2
2
MDI
IC25
= 420 A
VCES
= 1200 V
VCE(sat) typ. = 2.2 V
IGBTs T1-T2
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
± 20
V
TC = 25°C
TC = 80°C
420
A
300
A
VGE
=
±15
V;
R
G
=
4.7
â¦;
TVJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
450
A
VCES
VCE = 900 V; VGE = ±15 V; RG = 4.7 â¦; TVJ = 125°C
10
µs
non repetitive
TC = 25°C
1700
W
Symbol
V
CE(sat)
VGE(th)
ICES
IGES
td(on)
t
r
td(off)
t
f
Eon
Eoff
C
ies
QGon
RthJC
R
thJH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
I = 300 A; V = 15 V;
C
GE
TVJ =
25°C
TVJ = 125°C
IC = 10 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 300 A
VGE = ±15 V; RG = 4.7 â¦
2.2 2.8 V
2.6
V
4.5
6.5 V
0.8 3.3 mA
3.5
mA
600 nA
150
ns
60
ns
680
ns
50
ns
36
mJ
30
mJ
V = 25 V; V = 0 V; f = 1 MHz
CE
GE
VCE = 600 V; VGE = 15 V; IC = 300 A
(per IGBT)
with heatsink compound
17
nF
2.25
µC
0.08 K/W
0.15
K/W
Features
⢠IGBT
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current for optimized
performance in resonant circuits
⢠HiPerFREDTM diodes
- fast and soft reverse recovery
- low operating forward voltage
- low leakage current
⢠Package
- low inductive current path
- screw connection to high current
main terminals
- use of non interchangeable
connectors for auxiliary terminals
possible
- kelvin emitter terminal for easy drive
- isolated ceramic base plate
Applications
⢠drives
- AC
- DC
⢠power supplies
- rectifiers with power factor
correction
and recuperation capability
- UPS
© 2002 IXYS All rights reserved
1-2
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