MID550-12A4 Datasheet, PDF (1/4 Pages) IXYS Corporation – IGBT Modules Short Circuit SOA Capability Square RBSOA

MID 550-12 A4
MDI 550-12 A4
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
I
= 670 A
C25
V
CES
= 1200 V
V
= 2.3 V
CE(sat) typ.
MID
3
MDI
3
8
19
1
3
2
1
11
10
9
8
11
10
2
2
E 72873
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C80
I_CM
t_SC
(SCSOA)
RBSOA
P_{tot IGBT}
T_J
T_stg
V_ISOL
M_d
Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 20 kW
Continuous
Transient
T_C = 25°C
T_C = 80°C
T_C = 80°C, t_p = 1 ms 
V_GE = ±15 V, V_CE = V_CES, T_J = 125°C
R_G = 1.8 W, non repetitive
V_GE= ±15 V, T_J = 125°C, R_G = 1.8 W
Clamped inductive load, L = 100 mH
T_C = 25°C
50/60 Hz, RMS t = 1 min
I_ISOL £ 1 mA
t=1s
Insulating material: Al₂O₃
Mounting torque (module)
(teminals)
d_S
d_A
a
Weight
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Typical
Data according to a single IGBT/FRED unless otherwise stated.
 Additional current limitation by external leads
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
670
A
460
A
920
A
10
ms
I_CM = 800
A
V_CEK < V_CES
2750
W
150
°C
-40 ... +150
°C
4000
V~
4800
V~
2.25-2.75
20-25
2.5-3.7
22-33
14
9.6
50
250
8.8
Nm
lb.in.
Nm
lb.in.
mm
mm
m/s²
g
oz.
Features
q _{NPT IGBT technology}
q _{low saturation voltage}
q _{low switching losses}
q _{switching frequency up to 30 kHz}
q _{square RBSOA, no latch up}
q _{high short circuit capability}
q _{positive temperature coefficient for}
easy parallelling
q _{MOS input, voltage controlled}
q _{ultra fast free wheeling diodes}
q _{package with DCB ceramic base plate}
q _{isolation voltage 4800 V}
q _{UL registered E72873}
Advantages
q _{space and weight savings}
q _{reduced protection circuits}
Typical Applications
q _{AC and DC motor control}
q _{power supplies}
q _{welding inverters}
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