LKK47-06C5 Datasheet, PDF (1/4 Pages) IXYS Corporation – Dual CoolMOS™ 1) Power MOSFET

Advanced Technical Information
LKK 47-06C5
Dual CoolMOS^{™ 1)} Power MOSFET
Common Source Topology
DCB isoated package
V_DSS
= 600 V
I_D25
= 47 A
R_{DS(on) max} = 45 mΩ/MOSFET
MOSFET T1/T2
Symbol
V_DSS
V_D1D2
V_GS
I_D25
I_D90
E_AS
E_AR
Conditions
T_VJ = 25°C
T_VJ = 25°C
T_C = 25°C
T_C = 90°C
single pulse
repetitive
I_D = 11 A; T_C = 25°C
4
D1
T1
2
G1
3
S
T2
1
G2
5
D2
Maximum Ratings
600 V
±600 V
±20 V
47 A
32 A
1950 mJ
3 mJ
Symbol
R_DSon
R_DSon
V_GSth
I
DSS
I_GSS
C_iss
C_oss
Q_g
Q
gs
Q_gd
t_d(on)
t
r
t_d(off)
t
f
R_thJC
R
thCH
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 10 V; I_D = 44 A
total between D1 and D2
V_G1S = V_G2S = 10 V; I_D = 44 A
V
DS
=
V;
GS
I_D
=
3
mA
V
DS
=
V;
DSS
V
GS
=
0
V;
T_VJ
=
25°C
T_VJ = 125°C
V_GS = ±20 V; V_DS = 0 V
V_GS = 0 V; V_DS = 100 V
f = 1 MHz
40 45 mΩ
80
mΩ
2.5
3
50
6800
320
3.5 V
10 µA
µA
100 nA
pF
pF
V_GS= 0 to10 V; V_DS = 400 V; I_D = 44 A
150 190 nC
35
nC
50
nC
V_GS= 10 V; V_DS = 400 V;
I_D = 44 A; R_G = 3.3 Ω
30
ns
20
ns
100
ns
10
ns
with heatsink compound
0.45 K/W
0.25
K/W
1
2
3
4
5
Features
• fast CoolMOS^{™ 1)} power MOSFET
4^th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• AC Switch
- power regulation of AC heating
- light dimming
• Power factor correction (PFC)
interleaved operation mode
• Push pull converter
1) _CoolMOS™ _{is a trademark of}
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209b
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