L408 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFREDTM Epitaxial Diode with soft recovery

HiPerFRED^TM Epitaxial Diode
with soft recovery
V_RSM
V_RRM
Type
A
V
V
600
600
DSEP 8-06B
DSEP 8-06B
I_FAV = 10 A
V_RRM = 600 V
t_rr = 30 ns
TO-220 AC
C
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
I_FRMS
I_FAVM
I_FSM
E_AS
I_AR
T_VJ
T_VJM
T_stg
P_tot
M_d
Weight
Conditions
T_C = 125°C; rectangular, d = 0.5
T_VJ = 45°C; t_p = 10 ms (50 Hz), sine
T_VJ = 25°C; non-repetitive
I_AS = 0.9 A; L = 180 µH
V_A = 1.5·V_R typ.; f = 10 kHz; repetitive
T_C = 25°C
mounting torque
typical
Maximum Ratings
35
A
10
A
50
A
0.1
mJ
0.1
A
-55...+175
°C
175
°C
-55...+150
°C
60
W
0.4...0.6
Nm
2
g
Symbol
I_R ①
V_F ②
R_thJC
R_thCH
t_rr
I_RM
Conditions
T_VJ = 25°C V_R = V_RRM
T_VJ = 150°C V_R = V_RRM
I_F = 10 A; T_VJ = 150°C
T_VJ = 25°C
I_F = 1 A; -di/dt = 50 A/µs;
V_R = 30 V; T_VJ = 25°C
V_R = 100 V; I_F = 12 A; -di_F/dt = 100 A/µs
T_VJ = 100°C
Characteristic Values
typ. max.
60
µA
0.25 mA
1.66
V
2.66
V
2.5 K/W
0.5
K/W
30
ns
2.4
A
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified:
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I_RM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low I_RM reduces:
- Power dissipation within the diode
- Turn-onlossinthecommutatingswitch
Dimensions see Outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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