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| L356 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerDynFRED Epitaxial Diode with soft recovery | |||
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DSEP 9-06CR
HiPerDynFREDTM Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
VRSM
VRRM
Type
A
V
V
600
600
DSEP 9-06CR
IFAV = 9 A
VRRM = 600 V
trr = 15 ns
ISOPLUS 247TM
C
C
A
Isolated back surface *
A = Anode, C = Cathode
* Patent pending
Symbol
IFRMS
IFAVM
IFRM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
VISOL
FC
Weight
Conditions
Maximum Ratings
50
A
TC = 140°C; rectangular, d = 0.5
9
A
tP < 10 µs; rep. rating, pulse width limited by TVJM tbd
A
TVJ = 45°C; tp = 10 ms (50 Hz), sine
80
A
TVJ = 25°C; non-repetitive
IAS = 2 A; L = 180 µH
0.5
mJ
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.2
A
-55...+175
°C
175
°C
-55...+150
°C
TC = 25°C
50/60 Hz RMS; IISOL ⤠1 mA
mounting force with clip
150
W
2500
V~
20...120
N
typical
6
g
Symbol
IR â
VF â¡
RthJC
RthCH
trr
IRM
Conditions
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 9 A;
TVJ = 150°C
TVJ = 25°C
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 10 A; -diF/dt = 100 A/µs
TVJ = 100°C
Characteristic Values
typ. max.
50
µA
0.2
mA
2.9
V
4.0
V
1
K/W
0.25
K/W
15
ns
3.5
4.1
A
Pulse test: â Pulse Width = 5 ms, Duty Cycle < 2.0 %
⡠Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Features
⢠Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
⢠Low cathode to tab capacitance (<25pF)
⢠International standard package
⢠Planar passivated chips
⢠Very short recovery time
⢠Extremely low switching losses
⢠Low IRM-values
⢠Soft recovery behaviour
⢠Epoxy meets UL 94V-0
⢠Isolated and UL registered E153432
Applications
⢠Antiparallel diode for high frequency
switching devices
⢠Antisaturation diode
⢠Snubber diode
⢠Free wheeling diode in converters
and motor control circuits
⢠Rectifiers in switch mode power
supplies (SMPS)
⢠Inductive heating
⢠Uninterruptible power supplies (UPS)
⢠Ultrasonic cleaners and welders
Advantages
⢠Avalanche voltage rated for reliable
operation
⢠Soft reverse recovery for low EMI/RFI
⢠Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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